Shenzhen Hengstar Technology Co., Ltd.

Shenzhen Hengstar Technology Co., Ltd.

sales@angeltondal.com

86-755-89992216

Shenzhen Hengstar Technology Co., Ltd.
HomeProizvodiIndustrijski dodaci za pametni modulDDR3 UDIMM memorijske module Specifikacije

DDR3 UDIMM memorijske module Specifikacije

Vrsta plaćanja:
L/C,T/T,D/A
Incoterm:
FOB,EXW,CIF
Min. Naruči:
1 Piece/Pieces
Prevoz:
Ocean,Air,Express,Land
Share:
Chat Sada
  • opis proizvoda
Overview
Atributi proizvoda

Model br.NSO4GU3AB

Sposobnost opskrbe i dodatne informacije

PrevozOcean,Air,Express,Land

Vrsta plaćanjaL/C,T/T,D/A

IncotermFOB,EXW,CIF

Pakiranje i dostava
Jedinice za prodaju:
Piece/Pieces

4GB 1600MHz 240-pinski DDR3 UDIMM


Istorija revizije

Revision No.

History

Draft Date

Remark

1.0

Initial Release

Apr. 2022

 

Naručivanje informacija

Model

Density

Speed

Organization

Component Composition

NS04GU3AB

4GB

1600MHz

512Mx64bit

DDR3 256Mx8 *16


Opis
Hengstar Nevraćeni DDR3 SDRAM DIMMS (nepučene dvostruki podaci Sinhroni DRAM dvostruki linijski memorijski moduli) su male snage, velike brzine memorijskih modula koji koriste DDR3 SDRAM uređaje. NS04Gu3ab je 512m x 64-bitni dva rang 4GB DDR3-1600 CL11 1.5V SDRAM nebuchered DIMM proizvod, zasnovan na šesnaest 256m x 8-bitnih fbga komponenti. SPD je programiran na Jedec Standard Latency DDR3-1600 od 11. do 11. 11. na 1,5 V. Svaki 240-pinski DIMM koristi zlatni kontaktni prsti. SDRAM Nevraćeni DIMM namijenjen je za upotrebu kao glavna memorija kada je instalirana u sistemima kao što su PC i radne stanice.


Karakteristike
Snabdijevanje: VDD = 1.5V (1.425V do 1.575V)
vddq = 1,5V (1.425V do 1.575V)
800MHz FCK za 1600MB / sec / pin
8 Nezavisna interna banka
Programbilna cas kašnjenje: 11, 10, 9, 8, 7, 6
Programbibilna aditivna latencija: 0, CL - 2 ili CL - 1 sat
8-bitni pre-dohvat
Dužina: 8 (prelaska bez ikakvih ograničenja, uzastopno sa početnom adresom "000" samo), 4 sa TCCD = 4 što ne dopušta bešavno čitanje ili pisanje [bilo u letu koristeći A12 ili MRS]
bi-usmjerene diferencijalne podatke
Internal (samo) kalibracija; Unutarnja samomjela kroz ZQ PIN (RZQ: 240 Ohm ± 1%)
on Prekid die koristeći ODT PIN
Average osvježavajuće razdoblje 7.8us na nižoj od tcase od 85 ° C, 3,93, na 85 ° C <tcase <95 ° C
asinhrono resetiranje
adaljiva snaga pogona podataka
fly-po topologiji
pcb: visina 1,18 "(30 mm)
RoHS kompatibilan i bez halogena


Ključni parametri vremena

MT/s

tRCD(ns)

tRP(ns)

tRC(ns)

CL-tRCD-tRP

DDR3-1600

13.125

13.125

48.125

2011/11/11


Adresar

Configuration

Refresh count

Row address

Device bank address

Device configuration

Column Address

Module rank address

4GB

8K

32K A[14:0]

8 BA[2:0]

2Gb (256 Meg x 8)

1K A[9:0]

2 S#[1:0]


Opisi PIN-a

Symbol

Type

Description

Ax

Input

Address inputs: Provide the row address  for ACTIVE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments table for density-specific
addressing information.

BAx

Input

Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command.

CKx,
CKx#

Input

Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.

CKEx

Input

Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry
and clocks on the DRAM.

DMx

Input

Data mask (x8 devices only): DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write access.
Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins.

ODTx

Input

On-die  termination:  Enables  (registered  HIGH)  and  disables  (registered  LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command.

Par_In

Input

Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.

RAS#,
CAS#,
WE#

Input

Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.

RESET#

Input
(LVCMOS)

Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and
the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as
though a normal power-up was executed.

Sx#

Input

Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.

SAx

Input

Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address
range on the I2C bus.

SCL

Input

Serial
communication to and from the temperature sensor/SPD EEPROM on the I2C bus.

CBx

I/O

Check bits: Used for system error detection and correction.

DQx

I/O

Data input/output: Bidirectional data bus.

DQSx,
DQSx#

I/O

Data strobe: Differential data strobes. Output with read data; edge-aligned with read data;
input with write data; center-alig

SDA

I/O

Serial
sensor/SPD EEPROM on the I2C bus.

TDQSx,
TDQSx#

Output

Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no
function.

Err_Out#

Output (open
drain)

Parity error output: Parity error found on the command and address bus.

EVENT#

Output (open
drain)

Temperature event: The EVENT# pin is asserted by the temperature sensor when critical
temperature thresholds have been exceeded.

VDD

Supply

Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The
component VDD and VDDQ are connected to the module VDD.

VDDSPD

Supply

Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.

VREFCA

Supply

Reference voltage: Control, command, and address VDD/2.

VREFDQ

Supply

Reference voltage: DQ, DM VDD/2.

VSS

Supply

Ground.

VTT

Supply

Termination voltage: Used for control, command, and address VDD/2.

NC

No connect: These pins are not connected on the module.

NF

No function: These pins are connected within the module, but provide no functionality.

Napomene : tablica opisa PIN-a u nastavku je sveobuhvatan popis svih mogućih igle za sve DDR3 module. Svi igle popisani mogu ne podržavaju se na ovom modulu. Pogledajte PIN zadatke za informacije specifične za ovaj modul.


Funkcionalni blok dijagram

4GB, 512MX64 modul (2Rek od x8)

1


2


Bilješka:
1. ZQ kuglica na svakoj DDR3 komponenti povezana je sa vanjskim otpornikom od 240ω ± 1% koji je vezan za zemlju. Koristi se za kalibraciju komponentnog prekida i izlaznog upravljačkog programa.



Dimenzije modula


Sprijeda

3

Sprijeda

4

Napomene:
1.Sve dimenzije su u milimetrima (inča); Maks / min ili tipičan (tip) u kojem je navedeno.
2.Olerancija na svim dimenzijama ± 0,15 mm, osim ako nije drugačije određeno.
3. Dimenzionalni dijagram je samo za referencu.

Kategorije proizvoda : Industrijski dodaci za pametni modul

E-mail ovom dobavljaču
  • *Predmet:
  • *To:
    Mr. Jummary
  • *Email:
  • *Poruka:
    Vaša poruka mora biti između 20-8000 znakova
HomeProizvodiIndustrijski dodaci za pametni modulDDR3 UDIMM memorijske module Specifikacije
Pošaljite upit
*
*

Dom

Product

Phone

O nama

Upit

Neposredno ćemo vas kontaktirati

Popunite više informacija, tako da se brže može stupiti u kontakt s vama

Izjava o privatnosti: Vaša privatnost nam je veoma važna. Naša kompanija obećava da neće otkriti vaše lične podatke u svaku ekspanziju sa vašim eksplicitnim dozvolama.

Pošalji